Semiconductor fabrication is essential for the design of all integrated circuits. An understanding of the processes used to fabricate devices allows the designer to understand the advantages and disadvantages of these fundamental building blocks of IC systems. In this semiconductor micro-fabrication lab we fabricated a basic integrated circuit using the CMOS 70 process. We started with an n-type wafer and throughout the semester went through the process of creating a number of devices and circuits on the wafer. Each step of the fabrication process was studied and then demonstrated in the lab as it was studied in the class. We studied lithography, oxidation, doping, thin films, metalization, and device characteristics in the classroom. Throughout the semester we had to pattern our wafers, grow layers of silicon dioxide, do both n-type and p-type diffusions to create the PMOS and NMOS source and drain for each transistor along with the p-well for the NMOS devices. We also had to do e-beam evaporation for the metalization and then the probing and testing of our final product. The final report for the laboratory that includes all interim reports is available below. The report discusses each step of the fabrication process in detail.
Final Lab Report
CMOS 70 Microfabrication Report